DYNALAS
1. Technical Principle
Laser Substrate Heater for Wire Bonding utilizes high-energy laser beams to selectively heat specific regions of the substrate, achieving precise temperature control and rapid thermal input. Its core mechanisms include:
- Directional Energy Input: The laser beam (wavelength 900-1064 nm) is focused onto the substrate’s pad area (spot size 50-200 μm), with an energy density reaching 10⁵-10⁶ W/cm², enabling the local temperature to rise to 200-400°C within milliseconds to meet the bonding requirements;
- Non-Contact Heating: Avoids overall substrate temperature rise caused by traditional heat conduction, reducing thermal stress and warpage (<3 μm);
- Dynamic Temperature Control System: Combines infrared temperature measurement (accuracy ±0.3°C) with PID closed-loop feedback, achieving real-time temperature control with ±1°C accuracy.
2. Comparison of Core Advantages
| Indicator | Traditional heating methods (e.g., resistance heating) | Laser Substrate Heater | 提升幅度 |
|---|---|---|---|
| Heating Speed | 5-10℃/s | 200℃/s | 20 times |
| Heat-Affected Zone (HAZ) | >50μm | <5μm | Reduce by 90% |
| Temperature Uniformity | ±5℃ | ±1℃ | Increase by 80% |
Applicable Materials | Uniform Heat-Conductive Material (e.g., Copper) | Dissimilar Materials (e.g., SiC, Ceramics) | Expanded Applications |
| Energy Consumption | High (>150 J/mm²) | 低（<30J/mm²） | Reduce by 80% |
3. Typical Application Scenarios
① High-Density Wire Bonding
- Micro-pitch Bonding: Supports gold/copper wire bonding with 10μm pitch, reducing thermal damage by 90%;
- Multi-chip Stacking: Laser local heating of substrate pads enables vertical interconnection of 3D-stacked chips, reducing thermal resistance by 40%.
② Heterogeneous Material Bonding
- SiC Power Devices: Laser heating of silicon carbide (SiC) substrates (absorptivity >90% @1064 nm) enables aluminum wire bonding with tensile strength >50 MPa;
- Ceramic Substrates: Alumina substrates preheated by laser (150°C) followed by bonding result in a void rate <2%.
③ Reliability-Sensitive Scenarios
- MEMS Sensor Packaging: Laser heating avoids thermal deformation of MEMS structures, with sensitivity deviation <0.1%;
- Automotive-Grade Chips: Bonding under a wide temperature range (-40°C to 175°C), thermal cycling life increased to over 1000 cycles.
4.Future Trends
- Ultra-High-Speed Heating: Femtosecond lasers (pulse width <100 fs) enable picosecond-level temperature rise, facilitating non-destructive bonding of ultra-thin chips (<10 μm);
- Green Manufacturing: Development of green lasers (532 nm) to reduce energy consumption, combined with lead-free soldering processes to comply with RoHS standards;
- Intelligent Upgrade: AI real-time optimization of heating parameters (response time <1 ms), reducing defect rates to <0.01%.