DYNALAS
As semiconductor processes advance into nanometer-scale nodes, chip thickness has decreased to below 100μm, posing severe challenges to traditional mechanical ejector pin picking methods. This technology relies on physical ejector pins to separate the adhesive layer on the wafer tape (Wafer Tape), but it is highly prone to causing micro-cracks or latent defects in ultra-thin dice (Die), resulting in significant yield loss. The industry is now transitioning to thermal-assisted picking technology, whose core principle involves reducing the adhesion strength of UV adhesive or thermal-sensitive adhesive through precise heating.
However, traditional hot air or infrared heating suffer from three major pain points:
- Uncontrolled temperature gradient: Local overheating leads to film carbonization;
- Thermal response delay: The heating rate affects production efficiency;
- Energy waste: Insufficient thermal efficiency.
The laser temperature-controlled picking system has emerged as a next-generation solution—featuring Top-hat Beam technology:
- Achieves uniformity of the laser spot through optical processing, avoiding hot spot damage;
- High-speed closed-loop temperature control: Dynamically adjusts laser power based on an infrared temperature sensor (sampling rate 10 kHz), with temperature control accuracy reaching ±2°C;
- Selective heating: The laser only acts on the adhesive layer interface.
This technology has been applied to 3D IC packaging production lines, significantly improving the picking yield while drastically reducing energy consumption.
